Summary form only given. High-speed avalanche photodiodes (APDs) are often used in optical communication systems due to their increased sensitivity as compared to conventional p-i-n photodetectors. The crucial performance parameters for this application are low multiplication noise and high gain-bandwidth. Recently, we have demonstrated low multiplication noise and record gain-bandwidth product (290 GHz) using an AlGaAs-GaAs-InGaAs resonant-cavity APD with separate absorption, charge and multiplication (SACM) regions. Those devices operated in the wavelength range near 0.9 /spl mu/m. In this paper, we have extended this work to 1.55 /spl mu/m using InAlAs-lnGaAs materials system.


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    Titel :

    Resonant-cavity InGaAs-InAlAs separate absorption, charge and multiplication avalanche photodiodes


    Beteiligte:
    Nie, H. (Autor:in) / Lenox, C. (Autor:in) / Kinsey, G. (Autor:in) / Yuan, P. (Autor:in) / Holmes, A.L. (Autor:in) / Streetman, B.G. (Autor:in) / Campbell, J.C. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    337015 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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