We report the variations of optical characteristics in InGaN/GaN quantum well samples with different thin layer (about 1 nm) structures between the wells and barriers, including silicon-doped InN and InGaN compounds.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Effects on emission properties of interface thin layers in InGaN/GaN quantum well structures


    Contributors:


    Publication date :

    2003-01-01


    Size :

    76871 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Effects on emission properties of interface thin layers in InGaN/GaN quantum well structures

    Cheng, Y.-C. / Chen, H.-S. / Yang, C. C. et al. | British Library Conference Proceedings | 2003


    Phonon-replica transitions in InGaN/GaN quantum well structures

    Feng, S. W. / Tsai, C. Y. / Cheng, Y. C. et al. | British Library Online Contents | 2002


    Electronic and optical properties on non-polar InGaN/GaN quantum-well structures

    Park, S. H. / Kim, D. / Kim, H. M. et al. | IEEE | 2007


    Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping

    Cheng, Y.-C. / Lin, E.-C. / Feng, S.-W. et al. | British Library Conference Proceedings | 2003


    Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping

    Yung-Chen Cheng, / En-Chiang Lin, / Shih-Wei Feng, et al. | IEEE | 2003