We report the variations of optical characteristics in InGaN/GaN quantum well samples with different thin layer (about 1 nm) structures between the wells and barriers, including silicon-doped InN and InGaN compounds.


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    Titel :

    Effects on emission properties of interface thin layers in InGaN/GaN quantum well structures


    Beteiligte:
    Yung-Chen Cheng, (Autor:in) / Horng-Shyang Chen, (Autor:in) / Yang, C.C. (Autor:in) / Zhe-Chuang Feng, (Autor:in) / Gang Alan Li, (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    76871 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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