We report the variations of optical characteristics in InGaN/GaN quantum well samples with different thin layer (about 1 nm) structures between the wells and barriers, including silicon-doped InN and InGaN compounds.
Effects on emission properties of interface thin layers in InGaN/GaN quantum well structures
01.01.2003
76871 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Effects on emission properties of interface thin layers in InGaN/GaN quantum well structures
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