Summary form only given. In this work 1.55 /spl mu/m emitting quantum dash (QDash) lasers were realized by self organized growth of InAs quantum dashes on InGaAlAs surfaces lattice matched to InP. The influence of the number of QDash layers in the active region of a laser on device performances was studied. Device results from broad area as well as from cw operating ridge waveguide (RWG) QDash-lasers are presented and discussed in relation to telecommunication applications.


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    Title :

    InAs/InGaAlAs/InP quantum dash lasers for telecommunication applications


    Contributors:


    Publication date :

    2002-01-01


    Size :

    127680 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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