Oxide-confined ridge waveguide semiconductor lasers with a new type of low-dimensional active region - the self-assembled InAs "quantum dash" - are demonstrated. The name "dash" comes from a physical description of what is essentially an InAs QD that is elongated in one crystalline direction. They have room-temperature operation wavelength of 1.57 /spl mu/m, a high injection efficiency of 87%, and a low threshold current density of 450 A/cm/sup 2/.


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    Title :

    Low threshold oxide-confined InAs quantum dash ridge waveguide lasers on InP substrates


    Contributors:
    Wang, R.H. (author) / Stintz, A. (author) / Rotter, T.J. (author) / Malloy, K.J. (author) / Lester, L.F. (author) / Gray, A.L. (author) / Newell, T.C. (author) / Varangis, P.M. (author)


    Publication date :

    2001-01-01


    Size :

    142962 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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