Oxide-confined ridge waveguide semiconductor lasers with a new type of low-dimensional active region - the self-assembled InAs "quantum dash" - are demonstrated. The name "dash" comes from a physical description of what is essentially an InAs QD that is elongated in one crystalline direction. They have room-temperature operation wavelength of 1.57 /spl mu/m, a high injection efficiency of 87%, and a low threshold current density of 450 A/cm/sup 2/.


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    Titel :

    Low threshold oxide-confined InAs quantum dash ridge waveguide lasers on InP substrates


    Beteiligte:
    Wang, R.H. (Autor:in) / Stintz, A. (Autor:in) / Rotter, T.J. (Autor:in) / Malloy, K.J. (Autor:in) / Lester, L.F. (Autor:in) / Gray, A.L. (Autor:in) / Newell, T.C. (Autor:in) / Varangis, P.M. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    142962 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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