Oxide-confined ridge waveguide semiconductor lasers with a new type of low-dimensional active region - the self-assembled InAs "quantum dash" - are demonstrated. The name "dash" comes from a physical description of what is essentially an InAs QD that is elongated in one crystalline direction. They have room-temperature operation wavelength of 1.57 /spl mu/m, a high injection efficiency of 87%, and a low threshold current density of 450 A/cm/sup 2/.
Low threshold oxide-confined InAs quantum dash ridge waveguide lasers on InP substrates
01.01.2001
142962 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
WA4 Low Threshold Oxide-Confined InAs Quantum Dash Ridge Waveguide Lasers on InP Substrates
British Library Conference Proceedings | 2001
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