Summary form only given. In this work 1.55 /spl mu/m emitting quantum dash (QDash) lasers were realized by self organized growth of InAs quantum dashes on InGaAlAs surfaces lattice matched to InP. The influence of the number of QDash layers in the active region of a laser on device performances was studied. Device results from broad area as well as from cw operating ridge waveguide (RWG) QDash-lasers are presented and discussed in relation to telecommunication applications.
InAs/InGaAlAs/InP quantum dash lasers for telecommunication applications
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 1 ; 25-26 vol.1
2002-01-01
127680 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
MC4 InAs/InGaAlAs/InP Quantum Dash Lasers for Telecommunication Applications
British Library Conference Proceedings | 2002
|Broadband Emission in InAs/InGaAlAs Quantum-Dash-in-Well Laser
British Library Conference Proceedings | 2008
|WA4 Low Threshold Oxide-Confined InAs Quantum Dash Ridge Waveguide Lasers on InP Substrates
British Library Conference Proceedings | 2001
|