We demonstrate high power operation of 200 mW at 70°C of 660-nm GaInP/AlGaInP ridge laser diodes. Very narrow vertical beam divergence angle of 15.3° was achieved by employing a dry etching process and a two-step n-clad layer design.


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    Title :

    High Power Ridge GaInP/AIGaInP Laser Diodes for DVD-R/RW


    Contributors:


    Publication date :

    2005-01-01


    Size :

    510112 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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