We demonstrate high power operation of 200 mW at 70°C of 660-nm GaInP/AlGaInP ridge laser diodes. Very narrow vertical beam divergence angle of 15.3° was achieved by employing a dry etching process and a two-step n-clad layer design.
High Power Ridge GaInP/AIGaInP Laser Diodes for DVD-R/RW
01.01.2005
510112 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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