We demonstrate high power operation of 200 mW at 70°C of 660-nm GaInP/AlGaInP ridge laser diodes. Very narrow vertical beam divergence angle of 15.3° was achieved by employing a dry etching process and a two-step n-clad layer design.


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    Titel :

    High Power Ridge GaInP/AIGaInP Laser Diodes for DVD-R/RW


    Beteiligte:
    Byungjin Ma, (Autor:in) / Soohaeng Cho, (Autor:in) / Joonseok Kang, (Autor:in) / Sangbum Lee, (Autor:in) / Changyun Lee, (Autor:in) / Youngchul Shin, (Autor:in) / Youngmin Kim, (Autor:in) / Yongjo Park, (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    510112 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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