Summary form only given. We have measured the affect of strain on each of the recombination mechanisms that make up the total threshold current within 635nm laser diodes with a range of strain-well width combinations. Nonradiative recombination within the quantum well is a significant proportion of the total threshold current and determines the optimum strain-well width combination.
Optimisation of 635 nm tensile strained GaInP laser diodes
01.01.2002
113745 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Optimisation of 635nm Tensile Strained GaInP Laser Diodes
British Library Conference Proceedings | 2002
|Ordered and Disordered GaInP/AlGaInP Strained Layer Quantum Well Visible-Light Emitting Laser Diodes
British Library Conference Proceedings | 1992
|Fermi-Level Pinning in GaInP/AIGaInP Laser Diodes
IEEE | 1998
|Compressively Strained GaInP/AlGaInP Metal Clad Structure for 650nm Laser Diode
British Library Conference Proceedings | 1995
|