Summary form only given. We have measured the affect of strain on each of the recombination mechanisms that make up the total threshold current within 635nm laser diodes with a range of strain-well width combinations. Nonradiative recombination within the quantum well is a significant proportion of the total threshold current and determines the optimum strain-well width combination.


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    Titel :

    Optimisation of 635 nm tensile strained GaInP laser diodes


    Beteiligte:
    Smowton, P.M. (Autor:in) / Lewis, G.M. (Autor:in) / Chow, W.W. (Autor:in) / Jones, G. (Autor:in) / Bland, S. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    113745 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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