Summary form only given. We have measured the affect of strain on each of the recombination mechanisms that make up the total threshold current within 635nm laser diodes with a range of strain-well width combinations. Nonradiative recombination within the quantum well is a significant proportion of the total threshold current and determines the optimum strain-well width combination.
Optimisation of 635 nm tensile strained GaInP laser diodes
2002-01-01
113745 byte
Conference paper
Electronic Resource
English
Optimisation of 635nm Tensile Strained GaInP Laser Diodes
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