Summary form only given. We have measured the affect of strain on each of the recombination mechanisms that make up the total threshold current within 635nm laser diodes with a range of strain-well width combinations. Nonradiative recombination within the quantum well is a significant proportion of the total threshold current and determines the optimum strain-well width combination.


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    Title :

    Optimisation of 635 nm tensile strained GaInP laser diodes


    Contributors:
    Smowton, P.M. (author) / Lewis, G.M. (author) / Chow, W.W. (author) / Jones, G. (author) / Bland, S. (author)


    Publication date :

    2002-01-01


    Size :

    113745 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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