In this talk we will describe some recent results of low threshold VCSELs that show improved performance with the use of tunnel injection of electrons, and the application of quantum dot (QD) active regions. As the VCSEL active region size is reduced the threshold current density increases, and at high current densities loss of injected electrons over the p-type heterobarrier can both increase the lasing threshold and, due to insufficient Fermi-level clamping, reduce the VCSEL's differential slope efficiency.
Oxide-confined VCSELs with quantum well and quantum dot active regions
1997-01-01
142229 byte
Conference paper
Electronic Resource
English
Oxide-Confined VCSELs with Quantum Well and Quantum Dot Active Regions
British Library Conference Proceedings | 1997
|IEEE | 2002
|Fabrication issues of oxide-confined VCSELs [3003-11]
British Library Conference Proceedings | 1997
|1.3 micron InGaAsN oxide-confined VCSELs grown by MOCVD
IEEE | 2002
|