Integration of III-V optical devices on Si is an essential technology to realize optoelectronic VLSIs. We have been investigating wafer bonding as a key technology to integrate InGaAsP/InP lasers on Si and fabricated edge-emitting and surface-emitting lasers on Si. In this report, we review the bonding technology and discuss the laser fabrication and characteristics.
Wafer bonding technology for optoelectronic integration
1997-01-01
175349 byte
Conference paper
Electronic Resource
English
Wafer Bonding Technology for Optoelectronic Integration
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