Integration of III-V optical devices on Si is an essential technology to realize optoelectronic VLSIs. We have been investigating wafer bonding as a key technology to integrate InGaAsP/InP lasers on Si and fabricated edge-emitting and surface-emitting lasers on Si. In this report, we review the bonding technology and discuss the laser fabrication and characteristics.


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    Title :

    Wafer bonding technology for optoelectronic integration


    Contributors:
    Wada, H. (author) / Kamijoh, T. (author)


    Publication date :

    1997-01-01


    Size :

    175349 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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