Integration of III-V optical devices on Si is an essential technology to realize optoelectronic VLSIs. We have been investigating wafer bonding as a key technology to integrate InGaAsP/InP lasers on Si and fabricated edge-emitting and surface-emitting lasers on Si. In this report, we review the bonding technology and discuss the laser fabrication and characteristics.
Wafer bonding technology for optoelectronic integration
01.01.1997
175349 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Wafer Bonding Technology for Optoelectronic Integration
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