Integration of III-V optical devices on Si is an essential technology to realize optoelectronic VLSIs. We have been investigating wafer bonding as a key technology to integrate InGaAsP/InP lasers on Si and fabricated edge-emitting and surface-emitting lasers on Si. In this report, we review the bonding technology and discuss the laser fabrication and characteristics.


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    Titel :

    Wafer bonding technology for optoelectronic integration


    Beteiligte:
    Wada, H. (Autor:in) / Kamijoh, T. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    175349 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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