This paper reports the effects of the AlAs interface layer on the quantum wells (QW) and intersubband transitions (ISBT) properties. High quality QWs were obtained by having 4-6 multilayers of AlAs interface layer and increasing In composition in InGaAs to accommodate strain. The X-ray diffraction spectra of typical InGaAs/AlAs/AlAsSb QWs clearly demonstrate the high quality. Using coupled double quantum wells with 2.8 nm In/sub 0.82/Ga/sub 0.18/As, ultra low saturation intensity (Is) of 34 fJ//spl mu/m/sup 2/ was obtained from the multipass waveguide geometry sample. These results open the door for realization of ultra-first all-optical ISBT switch.
A novel InGaAs/AlAs/AlAsSb quantum well structures for ultrafast and low-power all-optical switches using intersubband transitions
2003-01-01
65623 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2001
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