This paper reports the effects of the AlAs interface layer on the quantum wells (QW) and intersubband transitions (ISBT) properties. High quality QWs were obtained by having 4-6 multilayers of AlAs interface layer and increasing In composition in InGaAs to accommodate strain. The X-ray diffraction spectra of typical InGaAs/AlAs/AlAsSb QWs clearly demonstrate the high quality. Using coupled double quantum wells with 2.8 nm In/sub 0.82/Ga/sub 0.18/As, ultra low saturation intensity (Is) of 34 fJ//spl mu/m/sup 2/ was obtained from the multipass waveguide geometry sample. These results open the door for realization of ultra-first all-optical ISBT switch.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    A novel InGaAs/AlAs/AlAsSb quantum well structures for ultrafast and low-power all-optical switches using intersubband transitions


    Contributors:
    Mozume, T. (author) / Kasai, J. (author) / Simoyama, T. (author) / Gopal, A.V. (author) / Yoshida, H. (author)


    Publication date :

    2003-01-01


    Size :

    65623 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English