This paper reports the effects of the AlAs interface layer on the quantum wells (QW) and intersubband transitions (ISBT) properties. High quality QWs were obtained by having 4-6 multilayers of AlAs interface layer and increasing In composition in InGaAs to accommodate strain. The X-ray diffraction spectra of typical InGaAs/AlAs/AlAsSb QWs clearly demonstrate the high quality. Using coupled double quantum wells with 2.8 nm In/sub 0.82/Ga/sub 0.18/As, ultra low saturation intensity (Is) of 34 fJ//spl mu/m/sup 2/ was obtained from the multipass waveguide geometry sample. These results open the door for realization of ultra-first all-optical ISBT switch.


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    Titel :

    A novel InGaAs/AlAs/AlAsSb quantum well structures for ultrafast and low-power all-optical switches using intersubband transitions


    Beteiligte:
    Mozume, T. (Autor:in) / Kasai, J. (Autor:in) / Simoyama, T. (Autor:in) / Gopal, A.V. (Autor:in) / Yoshida, H. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    65623 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch