We analyze the carrier density dependence of intersubband transition (ISB-T) responses at 1.55 gm in InGaAs/AlAsSb coupled double quantum well (C-DQW) structures and show the capability of all-optical switching faster than 700 fs due to ultrafast carrier redistribution in heavily doped C-DQW. We also show an experimental demonstration of ultrafast response of ISB absorption in this structure.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Ultrafast intersubband transitions in heavily doped InGaAs/AlAsSb coupled double quantum well structures for all-optical switching


    Contributors:
    Yoshida, H. (author) / Akiyama, T. (author) / Mozume, T. (author) / Georgiev, N. (author) / Gopal, A.V. (author) / Wada, O. (author) / Ishikawa, H. (author)


    Publication date :

    2001-01-01


    Size :

    157412 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English