We analyze the carrier density dependence of intersubband transition (ISB-T) responses at 1.55 gm in InGaAs/AlAsSb coupled double quantum well (C-DQW) structures and show the capability of all-optical switching faster than 700 fs due to ultrafast carrier redistribution in heavily doped C-DQW. We also show an experimental demonstration of ultrafast response of ISB absorption in this structure.
Ultrafast intersubband transitions in heavily doped InGaAs/AlAsSb coupled double quantum well structures for all-optical switching
2001-01-01
157412 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2001
|British Library Conference Proceedings | 1997
|British Library Conference Proceedings | 2001
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