THz spontaneous emission (/spl ap/3+3.5 THz) based on 2D-continuum-shallow donor (Si) states transitions has been investigated from both GaAs/InGaAs:Si and GaAs/InGaAsP:Si selectively doped heterostructures excited by CO/sub 2/ laser radiation. It is shown that the population inversion and the amplification with the coefficient up to 100+300 cm/sup -1/ per active layer be realized for planar doping level N/sub D//spl ap/10/sup 11/ cm/sup -2/ in multilayer structures with 50 periods of quantum wells under pump flux density 10/sup 23/ quant/(cm/sup 2//spl middot/s).
THz luminescence from n-type QW heterostructures under intraband photo-excitation
2004-01-01
163320 byte
Conference paper
Electronic Resource
English
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