In addition to the UV band-edge luminescence (3.4 eV), a yellow luminescence band (2.2 eV) has been found in GaN, which has been attributed to a deep level transition. The photoluminescence spectra of OMVPE grown epitaxial n-type GaN at different excitation intensities are reported. Photoreflectance measurements show that the UV luminescence peak at 3.4 eV is an intrinsic band-to-band transition. In addition, the luminescence from GaN and AlGaN/GaN heterostructures is studied in the stimulated emission regime.


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    Title :

    Yellow luminescence under spontaneous and stimulated emission conditions in GaN homostructures and heterostructures


    Contributors:


    Publication date :

    1996-01-01


    Size :

    143931 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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