In addition to the UV band-edge luminescence (3.4 eV), a yellow luminescence band (2.2 eV) has been found in GaN, which has been attributed to a deep level transition. The photoluminescence spectra of OMVPE grown epitaxial n-type GaN at different excitation intensities are reported. Photoreflectance measurements show that the UV luminescence peak at 3.4 eV is an intrinsic band-to-band transition. In addition, the luminescence from GaN and AlGaN/GaN heterostructures is studied in the stimulated emission regime.
Yellow luminescence under spontaneous and stimulated emission conditions in GaN homostructures and heterostructures
1996-01-01
143931 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1996
|Control of Spontaneous and Stimulated Emission in Conjugated Polymers
British Library Conference Proceedings | 1997
|