In addition to the UV band-edge luminescence (3.4 eV), a yellow luminescence band (2.2 eV) has been found in GaN, which has been attributed to a deep level transition. The photoluminescence spectra of OMVPE grown epitaxial n-type GaN at different excitation intensities are reported. Photoreflectance measurements show that the UV luminescence peak at 3.4 eV is an intrinsic band-to-band transition. In addition, the luminescence from GaN and AlGaN/GaN heterostructures is studied in the stimulated emission regime.
Yellow luminescence under spontaneous and stimulated emission conditions in GaN homostructures and heterostructures
01.01.1996
143931 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1996
|Control of Spontaneous and Stimulated Emission in Conjugated Polymers
British Library Conference Proceedings | 1997
|