In addition to the UV band-edge luminescence (3.4 eV), a yellow luminescence band (2.2 eV) has been found in GaN, which has been attributed to a deep level transition. The photoluminescence spectra of OMVPE grown epitaxial n-type GaN at different excitation intensities are reported. Photoreflectance measurements show that the UV luminescence peak at 3.4 eV is an intrinsic band-to-band transition. In addition, the luminescence from GaN and AlGaN/GaN heterostructures is studied in the stimulated emission regime.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Yellow luminescence under spontaneous and stimulated emission conditions in GaN homostructures and heterostructures


    Beteiligte:
    Grieshaber, W. (Autor:in) / Schubert, E.F. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    143931 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Yellow Luminescence Under Spontaneous and Stimulated Emission Conditions in GaN Homostructures and Heterostructures

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Control of Spontaneous and Stimulated Emission in Conjugated Polymers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    Control of spontaneous and stimulated emission in conjugated polymers

    Friend, R.H. / Burns, S. / Denton, G. et al. | IEEE | 1997


    Comparison of spontaneous and stimulated emission from UV-blue photonic materials

    Little, B.D. / Yong-Hoon Cho, / Schmidt, T.J. et al. | IEEE | 1999


    THz luminescence from n-type QW heterostructures under intraband photo-excitation

    Bekin, N. / Zhukavin, R. / Kovalevsky, K. et al. | IEEE | 2004