THz spontaneous emission (/spl ap/3+3.5 THz) based on 2D-continuum-shallow donor (Si) states transitions has been investigated from both GaAs/InGaAs:Si and GaAs/InGaAsP:Si selectively doped heterostructures excited by CO/sub 2/ laser radiation. It is shown that the population inversion and the amplification with the coefficient up to 100+300 cm/sup -1/ per active layer be realized for planar doping level N/sub D//spl ap/10/sup 11/ cm/sup -2/ in multilayer structures with 50 periods of quantum wells under pump flux density 10/sup 23/ quant/(cm/sup 2//spl middot/s).


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    Titel :

    THz luminescence from n-type QW heterostructures under intraband photo-excitation


    Beteiligte:
    Bekin, N. (Autor:in) / Zhukavin, R. (Autor:in) / Kovalevsky, K. (Autor:in) / Zvonkov, B. (Autor:in) / Uskova, E. (Autor:in) / Pavlov, S. (Autor:in) / Shastin, V. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    163320 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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