We have systematically studied both the spontaneous and stimulated emission (SE) behavior in GaN, InGaN, and AlGaN thin films by means of photoluminescence (PL), PL excitation, time-resolved PL, and optical pumping. All the epilayers were grown by metalorganic chemical vapor deposition (MOCVD). Recombination in the GaN thin films was found to be affected by non-radiative processes in the temperature range of 10 - 300 K.


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    Titel :

    Comparison of spontaneous and stimulated emission from UV-blue photonic materials


    Beteiligte:
    Little, B.D. (Autor:in) / Yong-Hoon Cho, (Autor:in) / Schmidt, T.J. (Autor:in) / Gainer, G.H. (Autor:in) / Lam, J.B. (Autor:in) / Song, J.J. (Autor:in) / Yang, W. (Autor:in) / Keller, S. (Autor:in) / Mishra, U.K. (Autor:in) / DenBaars, S.P. (Autor:in)


    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    122030 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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