Summary form only given. We report on the generation of microwaves at frequencies above 100 GHz with a semiconductor superlattice device. We made use of the negative differential conductivity of an n-doped GaAs/AlAs superlattice. In this contribution we report on a higher harmonic superlattice oscillator for radiation at 175 GHz with a power of the order of 100 /spl mu/W. The oscillator consisted of a superlattice device, mounted in a cavity and connected via a coaxial line with a bandstop filter (stopband from 75 GHz to 200 GHz) to a bias supply. Beside the emission at 175 GHz, oscillations at 35 GHz and 70 GHz occurred in the bias circuit.


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    Title :

    Generation of microwaves at frequencies above 100 GHz with a GaAs/AlAs superlattice


    Contributors:
    Haeussler, M. (author) / Brandl, J. (author) / Schomburg, E. (author) / Renk, K.F. (author) / Pavel'ev, D.G. (author) / Koschurinov, Yu. (author)


    Publication date :

    2002-01-01


    Size :

    98646 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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