In this paper, we present a QDIP heterostructure, comprised of InAs QDs embedded in a periodic AlAs/GaAs superlattice (SL) barrier. This SL barrier allows us to control the performance of QDIPs, culminating in state-of-the-art responsivity and conversion efficiency for a QDIP with a total SL period of 15 nm.


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    Title :

    Tailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriers


    Contributors:


    Publication date :

    2003-01-01


    Size :

    138783 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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