In this paper, we present a QDIP heterostructure, comprised of InAs QDs embedded in a periodic AlAs/GaAs superlattice (SL) barrier. This SL barrier allows us to control the performance of QDIPs, culminating in state-of-the-art responsivity and conversion efficiency for a QDIP with a total SL period of 15 nm.
Tailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriers
2003-01-01
138783 byte
Conference paper
Electronic Resource
English
Tailoring of Quantum Dot Infrared Photodetector Performance with AlAs/GaAs Superlattice Barriers
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