In this paper, we present a QDIP heterostructure, comprised of InAs QDs embedded in a periodic AlAs/GaAs superlattice (SL) barrier. This SL barrier allows us to control the performance of QDIPs, culminating in state-of-the-art responsivity and conversion efficiency for a QDIP with a total SL period of 15 nm.


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    Titel :

    Tailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriers


    Beteiligte:
    Stiff-Roberts, A.D. (Autor:in) / Chakrabarti, S. (Autor:in) / Bhattacharya, P. (Autor:in) / Kennerly, S. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    138783 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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