Summary form only given. We report on the generation of microwaves at frequencies above 100 GHz with a semiconductor superlattice device. We made use of the negative differential conductivity of an n-doped GaAs/AlAs superlattice. In this contribution we report on a higher harmonic superlattice oscillator for radiation at 175 GHz with a power of the order of 100 /spl mu/W. The oscillator consisted of a superlattice device, mounted in a cavity and connected via a coaxial line with a bandstop filter (stopband from 75 GHz to 200 GHz) to a bias supply. Beside the emission at 175 GHz, oscillations at 35 GHz and 70 GHz occurred in the bias circuit.


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    Titel :

    Generation of microwaves at frequencies above 100 GHz with a GaAs/AlAs superlattice


    Beteiligte:
    Haeussler, M. (Autor:in) / Brandl, J. (Autor:in) / Schomburg, E. (Autor:in) / Renk, K.F. (Autor:in) / Pavel'ev, D.G. (Autor:in) / Koschurinov, Yu. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    98646 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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