GaAs based metamorphic HEMT (MHEMT) technology has emerged as an attractive, low cost alternative to InP HEMTs. The strain-induced imperfections caused by high indium content layers on GaAs are eliminated in metamorphic devices by providing a properly grown lattice-matching buffer between the substrate and active device layers. Metamorphic device technology has now expanded to optical receiver components and shows performance suitable for 40 Gb/s digital and analog optical links.
Metamorphic optical receiver components
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 2 ; 420-421 vol.2
2002-01-01
159654 byte
Conference paper
Electronic Resource
English
WH1 Metamorphic Optical Receiver Components
British Library Conference Proceedings | 2002
|Springer Verlag | 2022
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