GaAs based metamorphic HEMT (MHEMT) technology has emerged as an attractive, low cost alternative to InP HEMTs. The strain-induced imperfections caused by high indium content layers on GaAs are eliminated in metamorphic devices by providing a properly grown lattice-matching buffer between the substrate and active device layers. Metamorphic device technology has now expanded to optical receiver components and shows performance suitable for 40 Gb/s digital and analog optical links.


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    Title :

    Metamorphic optical receiver components


    Contributors:
    Whelan, C.S. (author) / Leoni, R.E. (author) / Marsh, P.F. (author) / Zhang, Y. (author) / Hoke, W.E. (author) / Lichwala, S. (author) / Lardizabal, S. (author) / Hunt, J. (author) / Laighton, C. (author) / Grigas, M. (author)


    Publication date :

    2002-01-01


    Size :

    159654 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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    IEEE | British Library Conference Proceedings | 2002


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