GaAs based metamorphic HEMT (MHEMT) technology has emerged as an attractive, low cost alternative to InP HEMTs. The strain-induced imperfections caused by high indium content layers on GaAs are eliminated in metamorphic devices by providing a properly grown lattice-matching buffer between the substrate and active device layers. Metamorphic device technology has now expanded to optical receiver components and shows performance suitable for 40 Gb/s digital and analog optical links.


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    Titel :

    Metamorphic optical receiver components


    Beteiligte:
    Whelan, C.S. (Autor:in) / Leoni, R.E. (Autor:in) / Marsh, P.F. (Autor:in) / Zhang, Y. (Autor:in) / Hoke, W.E. (Autor:in) / Lichwala, S. (Autor:in) / Lardizabal, S. (Autor:in) / Hunt, J. (Autor:in) / Laighton, C. (Autor:in) / Grigas, M. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    159654 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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