Chemical beam epitaxy (CBE) continues to make very important advances in large-area material uniformity, process control, new precursors and device applications. The performance of CBE-prepared devices, electronic and opto-electronic, is among the best state-of-the-art and in some cases the best in their areas, such as long wavelength multi-quantum well InGaAsP/InP DFB lasers, 0.98 /spl mu/m GaAs/GaInP lasers, carbon-doped base GaAs/GaInP HBTs and InGaAs/InP HBTs and circuits.<>


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    Title :

    Recent advances in chemical beam epitaxy for opto-electronic device applications


    Contributors:
    Tsang, W.T. (author)

    Published in:

    Publication date :

    1993-01-01


    Size :

    158610 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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