Chemical beam epitaxy (CBE) continues to make very important advances in large-area material uniformity, process control, new precursors and device applications. The performance of CBE-prepared devices, electronic and opto-electronic, is among the best state-of-the-art and in some cases the best in their areas, such as long wavelength multi-quantum well InGaAsP/InP DFB lasers, 0.98 /spl mu/m GaAs/GaInP lasers, carbon-doped base GaAs/GaInP HBTs and InGaAs/InP HBTs and circuits.<>
Recent advances in chemical beam epitaxy for opto-electronic device applications
Proceedings of LEOS '93 ; 423-424
01.01.1993
158610 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Recent Advances in Chemical Beam Epitaxy for Opto-Electronic Device Applications
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