Chemical beam epitaxy (CBE) continues to make very important advances in large-area material uniformity, process control, new precursors and device applications. The performance of CBE-prepared devices, electronic and opto-electronic, is among the best state-of-the-art and in some cases the best in their areas, such as long wavelength multi-quantum well InGaAsP/InP DFB lasers, 0.98 /spl mu/m GaAs/GaInP lasers, carbon-doped base GaAs/GaInP HBTs and InGaAs/InP HBTs and circuits.<>


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Recent advances in chemical beam epitaxy for opto-electronic device applications


    Beteiligte:
    Tsang, W.T. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    158610 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Recent Advances in Chemical Beam Epitaxy for Opto-Electronic Device Applications

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993



    Recent Advances of In-Situ Process in Molecular Beam Epitaxy

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Recent Progress in Opto-Electronic Devices for Future Telecommunications

    Tsuchiya, H. / Mikami, O. | British Library Online Contents | 1993


    Recent results with the coupled opto-electronic oscillator [3463-30]

    Yao, X. S. / Maleki, L. / Wu, C. et al. | British Library Conference Proceedings | 1998