We report characteristics of GaAs quantum well intermixing using a buried Al-oxide layer. The band gap blue shifts about 59 meV when annealed at 950/spl deg/C for 120 seconds. The photoluminescence around the interface clearly shows anisotropic carrier diffusion to the lower energy region.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Intermixing of GaAs quantum well using buried Al-oxide layer


    Contributors:


    Publication date :

    1999-01-01


    Size :

    122451 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English