We report characteristics of GaAs quantum well intermixing using a buried Al-oxide layer. The band gap blue shifts about 59 meV when annealed at 950/spl deg/C for 120 seconds. The photoluminescence around the interface clearly shows anisotropic carrier diffusion to the lower energy region.
Intermixing of GaAs quantum well using buried Al-oxide layer
01.01.1999
122451 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2001
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