The authors investigate the effect of intermixing in shallow InGaAs/GaAs quantum well structure using impurity free induced disordering (IFVD) technique. The degradation of the photoluminescence (PL) signal is due to the severe loss of As from the material during high temperature annealing at above intermixing activation energy. The recovery of the PL signal from the intermixed InGaAs/GaAs quantum-well has been found to be achieved by applying a cycle-annealing at 800 °C which is below activation temperature.
Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing
2008-12-01
750381 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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