The authors investigate the effect of intermixing in shallow InGaAs/GaAs quantum well structure using impurity free induced disordering (IFVD) technique. The degradation of the photoluminescence (PL) signal is due to the severe loss of As from the material during high temperature annealing at above intermixing activation energy. The recovery of the PL signal from the intermixed InGaAs/GaAs quantum-well has been found to be achieved by applying a cycle-annealing at 800 °C which is below activation temperature.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing


    Beteiligte:
    Hongpinyo, V. (Autor:in) / Ding, Y. H. (Autor:in) / Dimas, C. E. (Autor:in) / Wang, Y. (Autor:in) / Ooi, B. S. (Autor:in) / Qiu, W. (Autor:in) / Goddard, L. L. (Autor:in) / Behymer, E. M. (Autor:in) / Cole, G. D. (Autor:in) / Bond, T. C. (Autor:in)


    Erscheinungsdatum :

    2008-12-01


    Format / Umfang :

    750381 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




    Intermixing-induced tunability in infrared-emitting InGaAs/GaAs quantum dots [3794-04]

    Leon, R. / SPIE | British Library Conference Proceedings | 1999



    Intermixing of GaAs quantum well using buried Al-oxide layer

    Kyu-Sang Kim, / Kyoung-Ho Ha, / Il-Young Han, et al. | IEEE | 1999