We demonstrate the use of ion implantation to induce intermixing of GaAs/AlGaAs quantum wells. The influence of various parameters such as implantation dose and temperature, annealing conditions and Al mole fraction are presented. Finally, the application of this technique to tune the lasing wavelength of GRINSCH laser diodes is demonstrated.
Implantation-induced intermixing in GaAs/AlGaAs quantum well structures and its application to quantum well lasers
1999-01-01
151409 byte
Conference paper
Electronic Resource
English
Al~xO~y induced intermixing in GaAs/AlGaAs quantum wells
British Library Conference Proceedings | 1999
|Interdiffused AlGaAs/GaAsP quantum well lasers
British Library Conference Proceedings | 1998
|THz GaAs/AlGaAs Quantum Well Detector
IEEE | 2006
|Single Versus Double Ion Implantation Defined AlGaAs/GaAs Quantum Well Waveguide
British Library Conference Proceedings | 1997
|