We demonstrate the use of ion implantation to induce intermixing of GaAs/AlGaAs quantum wells. The influence of various parameters such as implantation dose and temperature, annealing conditions and Al mole fraction are presented. Finally, the application of this technique to tune the lasing wavelength of GRINSCH laser diodes is demonstrated.


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    Title :

    Implantation-induced intermixing in GaAs/AlGaAs quantum well structures and its application to quantum well lasers


    Contributors:
    Tan, H.H. (author) / Johnston, M.B. (author) / Gal, M. (author)


    Publication date :

    1999-01-01


    Size :

    151409 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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