We report the coherent phonon spectroscopy of InGaP-GaAs-InGaP SQWs, in which a localized interfacial optical phonon is identified. The GaAs-InGaP heterointerface quality can be characterized by measuring the dephasing time of this interfacial phonon mode.


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    Title :

    Observation of coherent interfacial optical phonons in III-V semiconductor nanostructures


    Contributors:
    Chang, Y.-M. (author) / Chang, N.-A. (author) / Lin, H.H. (author) / Chia, C.-T. (author) / Chen, Y.F. (author)


    Publication date :

    2003-01-01


    Size :

    91485 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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