We report the coherent phonon spectroscopy of InGaP-GaAs-InGaP SQWs, in which a localized interfacial optical phonon is identified. The GaAs-InGaP heterointerface quality can be characterized by measuring the dephasing time of this interfacial phonon mode.
Observation of coherent interfacial optical phonons in III-V semiconductor nanostructures
2003-01-01
91485 byte
Conference paper
Electronic Resource
English
Observation of coherent interfacial optical phonons in III-V semiconductor nanostructures
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