We report the coherent phonon spectroscopy of InGaP-GaAs-InGaP SQWs, in which a localized interfacial optical phonon is identified. The GaAs-InGaP heterointerface quality can be characterized by measuring the dephasing time of this interfacial phonon mode.


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    Titel :

    Observation of coherent interfacial optical phonons in III-V semiconductor nanostructures


    Beteiligte:
    Chang, Y.-M. (Autor:in) / Chang, N.-A. (Autor:in) / Lin, H.H. (Autor:in) / Chia, C.-T. (Autor:in) / Chen, Y.F. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    91485 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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