The dephasing of coherent LO phonons due to excess photoexcited carriers in the near surface region of the GaAs [100] crystal is investigated with a time-resolved second-harmonic generation technique. The dephasing process was accelerated by the pre-injected carriers through carrier-phonon scattering and incoherent phonon-phonon scattering.


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    Titel :

    The dephasing of coherent phonons in GaAs [100]


    Beteiligte:
    Chang, Y.-M. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    171862 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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