The dephasing of coherent LO phonons due to excess photoexcited carriers in the near surface region of the GaAs [100] crystal is investigated with a time-resolved second-harmonic generation technique. The dephasing process was accelerated by the pre-injected carriers through carrier-phonon scattering and incoherent phonon-phonon scattering.
The dephasing of coherent phonons in GaAs [100]
01.01.2001
171862 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
The Dephasing of Coherent Phonons in GaAs (100)
British Library Conference Proceedings | 2001
|Observation of coherent optical phonons in GaAs/AlGaAs single heterojunction
British Library Conference Proceedings | 2003
|