The dephasing of coherent LO phonons due to excess photoexcited carriers in the near surface region of the GaAs [100] crystal is investigated with a time-resolved second-harmonic generation technique. The dephasing process was accelerated by the pre-injected carriers through carrier-phonon scattering and incoherent phonon-phonon scattering.


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    Title :

    The dephasing of coherent phonons in GaAs [100]


    Contributors:


    Publication date :

    2001-01-01


    Size :

    171862 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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