The dephasing of coherent LO phonons due to excess photoexcited carriers in the near surface region of the GaAs [100] crystal is investigated with a time-resolved second-harmonic generation technique. The dephasing process was accelerated by the pre-injected carriers through carrier-phonon scattering and incoherent phonon-phonon scattering.
The dephasing of coherent phonons in GaAs [100]
2001-01-01
171862 byte
Conference paper
Electronic Resource
English
The Dephasing of Coherent Phonons in GaAs (100)
British Library Conference Proceedings | 2001
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