Femtosecond Ti: sapphire laser was employed for ultrashallow junction formation in the dopant activation process. Activation of both p-type and n-type dopants were studied, and only very short diffusion length was observed after activation process.


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    Title :

    Near-Infrared Femtosecond Laser activation of shallow B and P doped layers


    Contributors:
    Yi-Chao Wang, (author) / Zaitsev, A. (author) / Ci-Ling Pan, (author) / Jia-Min Shieh, (author) / Zun-Hao Chen, (author) / Bau-Tong Dai, (author)


    Publication date :

    2005-01-01


    Size :

    199428 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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