Femtosecond Ti: sapphire laser was employed for ultrashallow junction formation in the dopant activation process. Activation of both p-type and n-type dopants were studied, and only very short diffusion length was observed after activation process.
Near-Infrared Femtosecond Laser activation of shallow B and P doped layers
01.01.2005
199428 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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