Femtosecond Ti: sapphire laser was employed for ultrashallow junction formation in the dopant activation process. Activation of both p-type and n-type dopants were studied, and only very short diffusion length was observed after activation process.


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    Titel :

    Near-Infrared Femtosecond Laser activation of shallow B and P doped layers


    Beteiligte:
    Yi-Chao Wang, (Autor:in) / Zaitsev, A. (Autor:in) / Ci-Ling Pan, (Autor:in) / Jia-Min Shieh, (Autor:in) / Zun-Hao Chen, (Autor:in) / Bau-Tong Dai, (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    199428 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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