Near-infrared (800 nm wavelength) femtosecond laser annealing (FLA) is employed on crystallization and activation of amorphous Si regions of thin film transistors (TFT). The transfer, and output characteristics for FLA-processed TFTs show promising performances.
Near-infrared femtosecond laser-processed thin-film transistor
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 3 ; 2182-2184 Vol. 3
2005-01-01
1278238 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Near-Infrared Femtosecond Laser-Processed Thin-Film Transistor
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