Near-infrared (800 nm wavelength) femtosecond laser annealing (FLA) is employed on crystallization and activation of amorphous Si regions of thin film transistors (TFT). The transfer, and output characteristics for FLA-processed TFTs show promising performances.


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    Title :

    Near-infrared femtosecond laser-processed thin-film transistor


    Contributors:


    Publication date :

    2005-01-01


    Size :

    1278238 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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