In conclusion, 980 nm lasers using strained GaInAsP QW lasers have been fabricated by MOCVD for the first time. Low threshold and high power operation have been obtained.


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    Title :

    980 nm laser diodes using strained-layer GaInAsP quantum-wells


    Contributors:
    Arakawa, S. (author) / Ishikawa, T. (author) / Iwai, N. (author) / Ohkubo, M. (author) / Kasukawa, A. (author)


    Publication date :

    1997-01-01


    Size :

    126917 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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