In conclusion, 980 nm lasers using strained GaInAsP QW lasers have been fabricated by MOCVD for the first time. Low threshold and high power operation have been obtained.
980 nm laser diodes using strained-layer GaInAsP quantum-wells
1997-01-01
126917 byte
Conference paper
Electronic Resource
English
980nm Laser Diodes using Strained-Layer GaInAsP Quantum-Wells
British Library Conference Proceedings | 1997
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