In conclusion, 980 nm lasers using strained GaInAsP QW lasers have been fabricated by MOCVD for the first time. Low threshold and high power operation have been obtained.
980 nm laser diodes using strained-layer GaInAsP quantum-wells
01.01.1997
126917 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
980nm Laser Diodes using Strained-Layer GaInAsP Quantum-Wells
British Library Conference Proceedings | 1997
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