In conclusion, 980 nm lasers using strained GaInAsP QW lasers have been fabricated by MOCVD for the first time. Low threshold and high power operation have been obtained.


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    Titel :

    980 nm laser diodes using strained-layer GaInAsP quantum-wells


    Beteiligte:
    Arakawa, S. (Autor:in) / Ishikawa, T. (Autor:in) / Iwai, N. (Autor:in) / Ohkubo, M. (Autor:in) / Kasukawa, A. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    126917 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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