We investigated a strain-compensated MQW structure in order to introduce a large strain into a AlGaInP quantum well and achieved a low-threshold 630-nm-band laser diode with a high maximum operating temperature for the first time. The active region consists of tensile strained quantum wells and compressively strained quantum barriers. Using the strain-compensating technique, a large tensile strain can be introduced to the quantum well without misfit dislocations.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Strained quantum well AlGaInP visible laser diodes


    Beteiligte:
    Honda, S. (Autor:in) / Shono, M. (Autor:in) / Yodoshi, K. (Autor:in) / Yamaguchi, T. (Autor:in) / Niina, T. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 1 ; 311-312 vol.1


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    163303 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Strained Quantum Well AlGaInP Visible Laser Diodes

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Ordered and Disordered GaInP/AlGaInP Strained Layer Quantum Well Visible-Light Emitting Laser Diodes

    Van der Poel, C. J. / Valster, A. / Finke, M. N. et al. | British Library Conference Proceedings | 1992


    High-Performance 630-nm Band AlGaInP Strained Multiple Quantum Well Laser Diodes with a Multiquantum Barrier

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993



    AlGaInP single quantum well laser diodes (Invited Paper) [2380-35]

    Bour, D. P. / Treat, D. W. / Beemink, K. J. et al. | British Library Conference Proceedings | 1995