We investigated a strain-compensated MQW structure in order to introduce a large strain into a AlGaInP quantum well and achieved a low-threshold 630-nm-band laser diode with a high maximum operating temperature for the first time. The active region consists of tensile strained quantum wells and compressively strained quantum barriers. Using the strain-compensating technique, a large tensile strain can be introduced to the quantum well without misfit dislocations.


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    Title :

    Strained quantum well AlGaInP visible laser diodes


    Contributors:
    Honda, S. (author) / Shono, M. (author) / Yodoshi, K. (author) / Yamaguchi, T. (author) / Niina, T. (author)

    Published in:

    Proceedings of LEOS'94 ; 1 ; 311-312 vol.1


    Publication date :

    1994-01-01


    Size :

    163303 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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