We investigated a strain-compensated MQW structure in order to introduce a large strain into a AlGaInP quantum well and achieved a low-threshold 630-nm-band laser diode with a high maximum operating temperature for the first time. The active region consists of tensile strained quantum wells and compressively strained quantum barriers. Using the strain-compensating technique, a large tensile strain can be introduced to the quantum well without misfit dislocations.
Strained quantum well AlGaInP visible laser diodes
Proceedings of LEOS'94 ; 1 ; 311-312 vol.1
1994-01-01
163303 byte
Conference paper
Electronic Resource
English
Strained Quantum Well AlGaInP Visible Laser Diodes
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