We have measured piezoelectric fields in p-i-n LED structures using the quantum confined Stark effect and photocurrent absorption. The results agree with calculations of the absorption where material parameters are interpolated from the binaries.
Piezoelectric field effects in InGaN quantum wells
2003-01-01
126136 byte
Conference paper
Electronic Resource
English
Piezoelectric Field Effects in InGaN Quantum Wells
British Library Conference Proceedings | 2003
|Large piezoelectric effects on photoluminescence properties in 10nm-thick InGaN quantum wells
British Library Conference Proceedings | 2003
|