The piezoelectric effects in InGaN quantum wells are examined using the time-resolved photoluminescence (PL) technique. An extremely large change in PL properties is found in a 10-nm thick quantum well with increasing excitation intensity.


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    Title :

    Large piezoelectric effects on photoluminescence properties in 10 nm-thick InGaN quantum wells


    Contributors:
    Gotoh, H. (author) / Tawara, T. (author) / Kobayashi, Y. (author) / Kobayashi, N. (author) / Saitoh, T. (author)


    Publication date :

    2003-01-01


    Size :

    80166 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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