The piezoelectric effects in InGaN quantum wells are examined using the time-resolved photoluminescence (PL) technique. An extremely large change in PL properties is found in a 10-nm thick quantum well with increasing excitation intensity.


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    Titel :

    Large piezoelectric effects on photoluminescence properties in 10 nm-thick InGaN quantum wells


    Beteiligte:
    Gotoh, H. (Autor:in) / Tawara, T. (Autor:in) / Kobayashi, Y. (Autor:in) / Kobayashi, N. (Autor:in) / Saitoh, T. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    80166 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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