The piezoelectric effects in InGaN quantum wells are examined using the time-resolved photoluminescence (PL) technique. An extremely large change in PL properties is found in a 10-nm thick quantum well with increasing excitation intensity.
Large piezoelectric effects on photoluminescence properties in 10 nm-thick InGaN quantum wells
2003-01-01
80166 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Large piezoelectric effects on photoluminescence properties in 10nm-thick InGaN quantum wells
British Library Conference Proceedings | 2003
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|Piezoelectric Field Effects in InGaN Quantum Wells
British Library Conference Proceedings | 2003
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