We have measured piezoelectric fields in p-i-n LED structures using the quantum confined Stark effect and photocurrent absorption. The results agree with calculations of the absorption where material parameters are interpolated from the binaries.
Piezoelectric field effects in InGaN quantum wells
01.01.2003
126136 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Piezoelectric Field Effects in InGaN Quantum Wells
British Library Conference Proceedings | 2003
|Large piezoelectric effects on photoluminescence properties in 10nm-thick InGaN quantum wells
British Library Conference Proceedings | 2003
|